MRF6P18190HR6 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, P_out = 190 W (PEP), I_DQ = 2000 mA
Two−Tone Measurements, Center Frequency = 1842.5 MHz
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
0.01
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
60
59
58
Ideal
57
P3dB = 54.13 dBm (258.82 W)
56
55 _{P1dB = 53.51 dBm (224.38 W)}
54
53
Actual
52
51
V_DD = 28 Vdc, I_DQ = 2000 mA
50
Pulsed CW, 8 µsec(on), 1 msec(off)
49
Center Frequency = 1842.5 MHz
48
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
40
V_DD = 28 Vdc, I_DQ = 2000 mA
f1 = 1837.5 MHz, f2 = 1847.5 MHz
30 ^{2 x W−CDMA, 10 MHz @ 3.84 MHz Bandwidth}
PAR = 8.5 dB @ 0.01% Probability (CCDF)
20
G_ps
−30
IM3
−35
ACPR
−40
10 T_C = 25_C
η_D
0
85_C
−30_C
−45
25_C
−50
−30_C
−10
25_C
1
85_C
10
−55
100 150
P_out, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
18
70
17
T_C = −30_C
16
25_C
G_ps
60
25_C ₅₀
15
85_C
40
−30_C
14
30
85_C
13
20
12
η_D
11
1
10
V_DD = 28 Vdc
I_DQ = 2000 mA
f = 1842.5 MHz
100
10
0
500
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6P18190HR6
6
17
16
15
14
13
32 V
28 V
12
24 V
11
10
20 V
16 V
9
V_DD = 12 V
8
7
I_DQ = 2000 mA
f = 1842.5 MHz
0 35 70 105 140 175 210 245 280 315 350
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor