MRF5P21045NR1 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 10 Ω
f = 2220 MHz
Z_load
f = 2060 MHz
f = 2060 MHz
Z_source
f = 2220 MHz
V_DD = 28 Vdc, I_DQ = 500 mA, P_out = 10 W Avg.
f
MHz
Z_source
W
Z_load
W
2060
8.01 - j6.68
4.38 - j4.62
2080
7.66 - j6.94
4.27 - j4.43
2100
7.26 - j7.20
4.12 - j4.04
2120
6.76 - j7.45
3.98 - j3.90
2140
6.28 - j7.71
3.81 - j3.69
2160
5.82 - j7.78
3.73 - j3.50
2180
5.37 - j7.85
3.65 - j3.30
2200
4.92 - j7.85
3.57 - j3.11
2220
4.46 - j7.97
3.49 - j2.92
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 17. Series Equivalent Source and Load Impedance — Single - Ended Configuration
MRF5P21045NR1
8
RF Device Data
Freescale Semiconductor