MRF5P21045NR1 Datasheet, PDF (1/11 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. Dual path topology suitable for Doherty, quadrature, single - ended and
push - pull applications.
• Typical 2 - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ = 500 mA,
P_out = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5P21045N
Rev. 0, 4/2007
MRF5P21045NR1
2110 - 2170 MHz, 10 W AVG., 28 V
2 x W - CDMA, DUAL PATH
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
RF_inA/V_GSA 3
2 RF_outA/V_DSA
RF_inB/V_GSB 4
1 RF_outB/V_DSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
V_DSS
- 0.5, +65
Vdc
V_GS
- 0.5, + 15
Vdc
T_stg
- 65 to +150
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 77°C, 10 W CW
R_θJC
1.35
1.48
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5P21045NR1
1