MRF5P21045NR1 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
− 20
V_DD = 28 Vdc, P_out = 45 W (PEP), I_DQ = 500 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
− 30
IM3 −L
IM3 −U
− 40
IM5 −U ^{IM5 −L}
− 50
IM7 −L IM7 −U
− 60
0.1
1
10
100
TWO −TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
55
54
P6dB = 47.74 dBm (74.82 W)
Ideal
53
52 ^{P3dB = 48.38 dBm (68.8 W)}
51
50 _{P1dB = 47.78 dBm (60.1 W)}
49
48
Actual
47
46
45
V_DD = 28 Vdc, I_DQ = 500 mA
44
Pulsed CW, 12 μsec(on), 1% Duty Cycle
43
f = 2140 MHz
42
28 29 30 31 32 33 34 35 36 37 38 39 40
P_in, INPUT POWER (dBm)
Figure 10. Pulsed CW Output Power versus
Input Power
50
45
V_DD = 28 Vdc, I_DQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
40 2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz
35 _{Channel Bandwidth, PAR = 8.5 dB}
30 ^{@ 0.01% Probability (CCDF)}
− 10
− 30_C
25_C
85_C 25_C ^−15
−30_C _−20
25_C
− 25
− 30_C
− 30
25
− 35
20
G_ps
15
10
η_D
5
1
IM3
ACPR
10
− 40
T_C = −30_C
− 45
85_C ^25_C
− 50
− 55
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
70
−30_C ^25_C
16
T_C = −30_C
85_C
60
15
G_ps
25_C
50
14
85_C
40
13
30
12 _{VDD = 28 Vdc}
20
I_DQ = 500 mA
η_D
11 _{f = 2140 MHz}
10
10
0
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
MRF5P21045NR1
6
RF Device Data
Freescale Semiconductor