MRF284LR1 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
3
100
T_flange = 75°C
C_iss
T_flange = 100°C
2
C_oss
10
1
T_J = 175°C
C_rss
0
0
4
8
12
16
20
24
28
V_DD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 10. DC Safe Operating Area
1
0
4
8
12
16
20
24
28
V_DS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance versus
Drain Source Voltage
60
50
40
30
20
10
0
−10
−20
−30
− 40
− 50
−60
−70
−80
−90
0
FUNDAMENTAL
3rd Order
V_DD = 26 Vdc
I_DQ = 1.8 Adc
f₁ = 2000.0 MHz
f₂ = 2000.1 MHz
5 10 15 20 25 30 35 40 45 50 55 60
11
10
G_ps
9
8 ^{VDD = 26 Vdc}
P_out = 30 W (PEP), I_DQ = 200 mA
7 ^{Two−Tone}
Frequency Delta = 100 kHz
6
5
4
VSWR
3
1920
1940
1960
45
40
η
35
30
−32
3.0
IMD
−36
2.0
−40
1.0
1980
2000
P_in, INPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 12. Class A Third Order Intercept Point Figure 13. 1920 - 2000 MHz Broadband Circuit Performance
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
0
50
100
150
200
250
T_J, JUNCTION TEMPERATURE (°C)
This graph displays calculated MTTF in hours x ampere² drain current.
Life tests at elevated temperature have correlated to better than ±10%
of the theoretical prediction for metal failure. Divide MTTF factor by I_D2
for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MRF284LR1 MRF284LSR1
8
RF Device Data
Freescale Semiconductor