MRF284LR1 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
40
14
P_out
35
13
30
12
25
11
20
10
G_ps
15
9
10
8
V_DD = 26 Vdc
5
I_DQ = 200 mA
7
f = 2000 MHz Single Tone
0
6
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
P_in, INPUT POWER (WATTS)
Figure 4. Output Power & Power Gain
versus Input Power
45
4W
40
3W
35
2W
30
25
P_in = 1 W
20
V_DD = 26 Vdc
15
I_DQ = 200 mA
Single Tone
10
1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000
f, FREQUENCY (MHz)
Figure 5. Output Power versus Frequency
− 20
V_DD = 26 Vdc
− 30
I_DQ = 200 mA
f₁ = 2000.0 MHz
f₂ = 2000.1 MHz
− 40
− 50 ^{3rd Order}
5th Order
− 60
7th Order
− 70
− 80
0.1
1.0
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
− 20
V_DD = 26 Vdc
f₁ = 2000.0 MHz
f₂ = 2000.1 MHz
− 30
100 mA
− 40 _{300 mA}
− 50
I_DQ = 400 mA
200 mA
− 60
0.1
1.0
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion
versus Output Power
12
−10
11
−15
G_ps
10
−20
9
−25
8
−30
P_out = 30 W (PEP)
7
I_DQ = 200 mA
f1 = 2000.0 MHz
IMD −35
f2 = 2000.1 MHz
6
−40
16
18
20
22
24
26
28
V_DD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
13
I_DQ = 400 mA
300 mA
12
200 mA
11
10
9 100 mA
8
0.1
V_DD = 26 Vdc
f₁ = 2000.0 MHz
f₂ = 2000.1 MHz
1.0
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
7