MRF284LR1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF284
Rev. 17, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN - PCS/cellular radio
and wireless local loop.
• Specified Two - Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = - 29 dBc
• Typical Single - Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF284LR1
MRF284LSR1
2000 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF284LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF284LSR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Drain - Source Breakdown Voltage
(V_GS = 0, I_D = 10 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 20 Vdc, V_GS = 0)
Gate - Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0)
V_(BR)DSS
I_DSS
I_GSS
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Min
65
—
—
Value
- 0.5, +65
± 20
87.5
0.5
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Value
2.0
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
1.0
μAdc
—
10
μAdc
(continued)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
1