MRF1535NT1_0806 Datasheet, PDF (8/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 10 Ω
Z_OL*
f = 175 MHz
f = 175 MHz ^{f = 135 MHz}
Z_in
f = 135 MHz
Z_OL* ^{f = 520 MHz}
f = 450 MHz
f = 450 MHz f = 520 MHz
Z_in
V_DD = 12.5 V, I_DQ = 250 mA, P_out = 35 W
f
Z_in
MHz
Ω
Z_OL*
Ω
135
5.0 + j0.9 1.7 + j0.2
155
5.0 + j0.9 1.7 + j0.2
175
3.0 + j1.0 1.3 + j0.1
V_DD = 12.5 V, I_DQ = 500 mA, P_out = 35 W
f
Z_in
MHz
Ω
Z_OL*
Ω
450
0.8 - j1.4 1.0 - j0.8
470
0.9 - j1.4 1.1 - j0.6
500
1.0 - j1.4 1.1 - j0.6
520
0.9 - j1.4 1.1 - j0.5
Z_in = Complex conjugate of source
impedance.
Z_in = Complex conjugate of source
impedance.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 20. Series Equivalent Input and Output Impedance
MRF1535NT1 MRF1535FNT1
8
RF Device Data
Freescale Semiconductor