MRF1535NT1_0806 Datasheet, PDF (6/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS, 450 - 520 MHz
15
470 MHz
14
V_DD = 12.5 Vdc
13
450 MHz
12
11
10
520 MHz ^{500 MHz}
9
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
70
520 MHz 500 MHz
60
470 MHz
50
450 MHz
40
30
V_DD = 12.5 Vdc
20
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus Output Power
50
450 MHz
45
470 MHz
500 MHz
40
520 MHz
35
30
200
400
V_DD = 12.5 Vdc
P_in = 34 dBm
600
800
1000
1200
I_DQ, BIASING CURRENT (mA)
Figure 15. Output Power versus Biasing Current
80
70
520 MHz
60
450 MHz
500 MHz
470 MHz
50
40
200
400
V_DD = 12.5 Vdc
P_in = 34 dBm
600
800
1000
1200
I_DQ, BIASING CURRENT (mA)
Figure 16. Drain Efficiency versus Biasing Current
70
60
50
40
450 MHz
30
20
10
10
470 MHz
500 MHz
520 MHz
I_DQ = 250 mA
P_in = 34 dBm
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus Supply Voltage
80
70
520 MHz
60
450 MHz
470 MHz
500 MHz
50
I_DQ = 250 mA
P_in = 34 dBm
40
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1
6
RF Device Data
Freescale Semiconductor