MRF1535NT1_0806 Datasheet, PDF (1/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 13.5 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband- Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
450 - 520 MHz
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF1535N
Rev. 12, 6/2008
MRF1535NT1
MRF1535FNT1
520 MHz, 35 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264 - 10, STYLE 1
TO - 272- 6 WRAP
PLASTIC
MRF1535NT1
CASE 1264A - 03, STYLE 1
TO - 272- 6
PLASTIC
MRF1535FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C ⁽¹⁾
Derate above 25°C
V_DSS
V_GS
I_D
P_D
- 0.5, +40
± 20
6
135
0.50
Vdc
Vdc
Adc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
T_stg
T_J
Symbol
- 65 to +150
200
Value⁽²⁾
°C
°C
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
R_θJC
0.90
°C/W
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
°C
1.
Calculated based on the formula P_D =
TJ _– TC
R_θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
1