MRF7S35015HSR3_11 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
17.25
44
17
η_D
43
16.75
42
G_ps
16.5
41
16.25
IRL
16
--9
15.75
--18
15.5
15.25
V_DD = 32 Vdc, I_DQ = 50 mA, P_out = 15 W
Pulse Width = 100 μsec, Duty Cycle = 20%
3100 3150 3200 3250 3300 3350 3400
--27
--36
3450 3500
f, FREQUENCY (MHz)
Figure 13. Pulsed Power Gain, Drain Efficiency
and IRL versus Frequency
--25
24
--27
V_DD = 32 Vdc, I_DQ = 150 mA, f = 3500 MHz, Single--Carrier
OFDM 802.16d, 64 QAM ³/₄, 4 Bursts, 10 MHz
22
--29 ^{Channel Bandwidth, Input Signal}
20
--31 ^{PAR = 9.5 dB @ 0.01% Probability on CCDF}
18
--33
--35
η_D
--37
RCE
16
14
18.3
12
18.2
--39
G_ps
10
18.1
--41
8
18
--43
6
17.9
--45
4
17.8
28 29 30 31 32 33 34 35 36
P_out, OUTPUT POWER (dBm)
Figure 14. Single--Channel OFDM Relative Constellation Error,
Drain Efficiency and Gain versus Output Power
10⁸
10⁷
10⁶
10⁵
90
110 130 150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 32 Vdc, P_out = 15 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and η_D = 41%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF7S35015HSR3
7