MRF7S35015HSR3_11 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
• Typical Pulsed Performance: V_DD = 32 Volts, I_DQ = 50 mA,
P_out = 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 16 dB
Drain Efficiency — 41%
• Typical WiMAX Performance: V_DD = 32 Volts, I_DQ = 150 mA,
P_out = 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM ³/₄, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 18 dB
Drain Efficiency — 16%
RCE — --33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak
Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Document Number: MRF7S35015HS
Rev. 2, 4/2011
MRF7S35015HSR3
3100--3500 MHz, 15 W PEAK, 32 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465J--02, STYLE 1
NI--400S--240
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
Symbol
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Value ^(2,3)
Vdc
Vdc
Vdc
°C
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 15 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
R_θJC
0.60
°C/W
Case Temperature 81°C, 15 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
0.73
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S35015HSR3
1