MRF7S35015HSR3_11 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
30
3100 MHz --30_C ^{3300 MHz --30_C}
3300 MHz 25_C
25
3100 MHz 25_C
3500 MHz --30_C
20
3300 MHz 85_C
15
3500 MHz 85_C
3100 MHz 85_C
10
3500 MHz 25_C
5
V_DD = 32 Vdc, I_DQ = 50 mA
Pulse Width = 100 μsec, Duty Cycle = 20%
0
0
0.2
0.4
0.6
0.8
1
P_in, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
17
16
15
T_C = --30_C
14
25_C
13 _{85_C}
G_ps
η_D
60
--30_C
50
40
30
85_C
20
12
V_DD = 32 Vdc, I_DQ = 50 mA, f = 3100 MHz ¹⁰
Pulse Width = 100 μsec, Duty Cycle = 20%
11
0
1
10
30
P_out, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3100 MHz
18
G_ps
17
T_C = --30_C
16
15 ^25_C
60
--30_C
50
40
85_C
30
14 85_C
η_D
20
13
V_DD = 32 Vdc, I_DQ = 50 mA, f = 3300 MHz ¹⁰
Pulse Width = 100 μsec, Duty Cycle = 20%
12
0
1
10
30
P_out, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3300 MHz
19
G_ps
18
T_C = --30_C
17
16
25_C
15
50
--30_C
45
40
85_C
35
30
14
25
85_C
η_D
13
20
12
V_DD = 32 Vdc, I_DQ = 50 mA, f = 3500 MHz
15
Pulse Width = 100 μsec, Duty Cycle = 20%
11
10
1
10
30
P_out, OUTPUT POWER (WATTS) PULSED
Figure 12. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3500 MHz
MRF7S35015HSR3
6
RF Device Data
Freescale Semiconductor