MRF7S21150HR3 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1350 mA
−20 ^{f1 = 2135 MHz, f2 = 2145 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
−50 _{3rd Order}
−60
−70
1
5th Order
7th Order
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 120 W (PEP), I_DQ = 1350 mA
−10 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
−20
−30
IM5−U
−40
IM5−L
IM3−U
IM3−L
−50 _IM7−U
−60 ^IM7−L
1
10
80
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
45
0
Ideal
40
−1
35
−1 dB = 39.58 W
−2
30
−2 dB = 54.29 W
−3
25
−4 _{VDD = 28 Vdc, IDQ = 1350 mA}
−3 dB = 72.73 W ^Actual
20
f = 2140 MHz, Input Signal PAR = 7.5 dB
−5
15
20
30
40
50
60
70
80
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−30 _{VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz}
−35
Single−Carrier W−CDMA, Input Signal
PAR = 7.5 dB, ACPR @ ±5 MHz Offset in
3.84 MHz, Integrated Bandwidth
−40 _{Uncorrected, Upper and Lower}
−45 ^{DPD Corrected}
No Memory Correction
−50
−55
−60
DPD Corrected
with Memory Correction
−65
38
40
42
44
46
48
50
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
G_ps
18
17
16
T_C = −30_C
25_C
85_C
60
−30_C
25_C
85_C ⁵⁰
40
30
15
20
14
η_D
13
1
V_DD = 28 Vdc
I_DQ = 1350 mA
f = 2140 MHz
10
100
10
0
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
7