MRF7S21150HR3 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
18
33
17.5 ^ηD
G_ps
32
17
31
16.5
30
16
V_DD = 28 Vdc, P_out = 44 W (Avg.), I_DQ = 1350 mA
29
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
15.5
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
0
−4
15
−0.5
−8
14.5
PARC
14
−1
−12
−1.5
−16
13.5
IRL
13
−2
−20
−2.5
−24
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 44 Watts Avg.
18
42
17.5
41
η_D
17
40
16.5
39
16 ^Gps
38
15.5
V_DD = 28 Vdc, P_out = 75 W (Avg.), I_DQ = 1350 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
37
15
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) −2.5
−5
14.5
PARC
14
−3
−10
−3.5
−15
13.5
IRL
13
−4
−20
−4.5
−25
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 75 Watts Avg.
19
18 _{1690 mA}
17 ^{1350 mA}
I_DQ = 2020 mA
16 ^{1010 mA}
15
675 mA
14
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
13
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30 _{IDQ = 675 mA}
2020 mA
−40
1010 mA
−50
1350 mA
1690 mA
−60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21150HR3 MRF7S21150HSR3
6
RF Device Data
Freescale Semiconductor