MRF7S21150HR3 Datasheet, PDF (10/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61
60
Ideal
P6dB = 54.68 dBm (294 W)
59
58
P3dB = 54.05 dBm (254 W)
57
56 _{P1dB = 53.1 dBm}
55 (200 W)
54
53
Actual
52
51
V_DD = 28 Vdc, I_DQ = 1350 mA, Pulsed CW
50
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
49
31 32 33 34 35 36 37 38 39 40 41 42 43
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
4.66 - j8.05
0.53 - j2.26
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V
62
61
Ideal
P6dB = 55.47 dBm (352 W)
60
59
P3dB = 54.94 dBm (311 W)
58
57 P1dB = 54.1 dBm
56 ^{(257 W)}
55
54
Actual
53
52
V_DD = 32 Vdc, I_DQ = 1350 mA, Pulsed CW
51
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
50
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 32 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
4.66 - j8.05
0.64 - j2.17
Figure 18. Pulsed CW Output Power
versus Input Power @ 32 V
MRF7S21150HR3 MRF7S21150HSR3
10
RF Device Data
Freescale Semiconductor