MRF7S18125AHR3 Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
60
P6dB = 52.74 dBm (187.8 W)
59
Ideal
58 _{P3dB = 52.25 dBm (167.9 W)}
57
56
55 _{P1dB = 51.60 dBm}
54 ^{(144.6 W)}
53
Actual
52
51
V_DD = 28 Vdc, I_DQ = 1100 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 1840 MHz
50
34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
18
17.5
17
16.5
16 ^Gps
15.5
T_C = −30_C
25_C
85_C
70
−30_C ⁶⁵
60
25_C
55
85_C ⁵⁰
45
15
40
14.5
35
14
13.5
η_D
13
12.5
10
V_DD = 28 Vdc
I_DQ = 1100 mA
f = 1840 MHz
100
30
25
20
15
300
P_out, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
5
4
3
V_DD = 28 Vdc
I_DQ = 1100 mA
EDGE Modulation
P_out = 78 W Avg.
2
43 W Avg.
1
15 W Avg.
0
1810 1820 1830 1840 1850 1860 1870 1880
f, FREQUENCY (MHz)
Figure 9. EVM versus Frequency
−35
−40
25_C
−45
85_C
−50
−55
T_C = −30_C
−60
−65
V_DD = 28 Vdc
I_DQ = 1100 mA
−70
f = 1840 MHz
EDGE Modulation
−75
0 20 40 60 80 100 120 140 160 180 200
P_out, OUTPUT POWER (WATTS)
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
−50
−55
SR @ 400 kHz
−60
−65
−70
−75 ^{SR @ 600 kHz}
P_out = 78 W Avg.
43 W Avg.
15 W Avg.
78 W Avg.
V_DD = 28 Vdc
I_DQ = 1100 mA
EDGE Modulation
15 W Avg.
43 W Avg.
−80
1810 1820 1830 1840 1850 1860 1870 1880
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−45
25_C
−50
−55
85_C
−60
T_C = −30_C
−65
−70
−75
−80
V_DD = 28 Vdc, I_DQ = 1100 mA
f = 1840 MHz, EDGE Modulation
−85
0 20 40 60 80 100 120 140 160 180 200
P_out, OUTPUT POWER (WATTS)
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S18125AHR3 MRF7S18125AHSR3
7