MRF7S18125AHR3 Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
18
V_DD = 28 Vdc
17.5 ^{Pout = 125 W CW, IDQ = 1100 mA}
G_ps
17
59
−7
58
−9
57
−11
16.5
56
−13
η_D
16
55
−15
15.5
54
−17
IRL
15
53
−19
1810 1820 1830 1840 1850 1860 1870 1880
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 125 Watts CW
17.5
60
−7
17
G_ps
η_D
16.5
50
−9
40
−11
16
V_DD = 28 Vdc, P_out = 57 W Avg.
I_DQ = 1100 mA, EDGE Modulation
30
−13
IRL
15.5
20
−15
15
10
−17
EVM
14.5
0
−19
1810 1820 1830 1840 1850 1860 1870 1880
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ P_out = 57 Watts Avg.
18
I_DQ = 1650 mA _{1375 mA}
17
16 ^{825 mA}
550 mA
15
1100 mA
14 V_DD = 28 Vdc
f = 1840 MHz
13
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain versus Output Power
0
V_DD = 28 Vdc, P_out = 125 W (PEP)
−10 ^{IDQ = 1100 mA, Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 1840 MHz
−20
−30
IM3−L
IM5−L ^IM3−U
−40
IM5−U
−50
IM7−L
IM7−U
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
MRF7S18125AHR3 MRF7S18125AHSR3
6
RF Device Data
Freescale Semiconductor