MRF7S18125AHR3 Datasheet, PDF (10/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 5 Ω
f = 1920 MHz
Z_load
f = 1920 MHz
f = 1760 MHz
Z_source
f = 1760 MHz
V_DD = 28 Vdc, I_DQ = 1100 mA, P_out = 125 W CW
f
MHz
Z_source
W
Z_load
W
1760
1.30 - j3.17
1.44 - j2.62
1780
1.27 - j3.05
1.41 - j2.47
1800
1.24 - j2.92
1.39 - j2.32
1820
1.21 - j2.80
1.37 - j2.17
1840
1.18 - j2.66
1.34 - j2.02
1860
1.15 - j2.52
1.31 - j1.88
1880
1.12 - j2.37
1.29 - j1.73
1900
1.09 - j2.21
1.26 - j1.58
1920
1.05 - j2.06
1.23 - j1.44
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 17. Series Equivalent Source and Load Impedance
MRF7S18125AHR3 MRF7S18125AHSR3
10
RF Device Data
Freescale Semiconductor