MRF7S15100HR3_09 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
22
90
−18
V_DD = 28 Vdc, I_DQ = 600 mA, f = 1490 MHz
85_C
Single−Carrier W−CDMA, 3.84 MHz
25_C
20 _{Channel Bandwidth}
−30_C ⁷⁵
−25
25_C
18
G_ps
16
T_C = −30_C
85_C
25_C
60
−32
85_C
45
−39
14
30
−46
ACPR
12
η_D
10
1
15
−53
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
−60
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
25
0
20
−5
S21
15
−10
10
−15
5
V_DD = 28 Vdc
−20
S11
I_DQ = 600 mA
0
−25
1150 1250 1350 1450 1550 1650 1750 1850 1950 2050 2150 2250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
10⁹
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 23 W Avg., and η_D = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
MRF7S15100HR3 MRF7S15100HSR3
7