MRF7S15100HR3_09 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
20
35
19
G_ps ³⁴
18
33
17 VDD = 28 Vdc, Pout = 23 W (Avg.)
16
I_DQ = 600 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal
15 _{PAR = 7.5 dB @ 0.01% Probability on CCDF}
14
PARC
13
η_D 32
31
−36
−5
−0.7
−37
−10
−0.8
−38
−15
−0.9
12
−39
−20
−1
11
IRL
10
−40
ACPR
−25
−1.1
−41
−30
−1.2
1400 1425 1450 1475 1500 1525 1550 1575 1600
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 23 Watts Avg.
20
I_DQ = 900 mA
19 750 mA
600 mA
18
450 mA
17
300 mA
V_DD = 28 Vdc, f = 1490 MHz
CW Measurements
16
1
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 4. CW Power Gain versus Output Power
−10
V_DD = 28 Vdc, P_out = 90 W (PEP), I_DQ = 600 mA
Two−Tone Measurements
−20 _{(f1 + f2)/2 = Center Frequency of 1490 MHz}
IM3−L
−30
IM3−U
IM5−U
−40
IM5−L
−50
IM7−U
IM7−L
−60
−70
1
10
100
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
21
1
V_DD = 28 Vdc, I_DQ = 600 mA, f = 1490 MHz, Single−Carrier
55
−15
20
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
0 _{PAR = 7.5 dB @ 0.01% Probability on CCDF}
η_{D 50}
−20
19
−1
ACPR
45
−25
−1 dB = 24.14 W
18
−2
−2 dB = 32.65 W
G_ps ⁴⁰
−30
17
−3
35
−35
16
−4
−3 dB = 43.29 W
30
−40
PARC
15
−5
25
−45
15
25
35
45
55
65
P_out, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF7S15100HR3 MRF7S15100HSR3
6
RF Device Data
Freescale Semiconductor