MRF7S15100HR3_09 Datasheet, PDF (2/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DD = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 174 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1.74 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1.2
2
2.7
Vdc
V_GS(Q)
2
2.7
3.5
Vdc
V_DS(on)
0.1
0.2
0.3
Vdc
C_rss
—
0.6
—
pF
C_oss
—
300
—
pF
C_iss
—
176
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 600 mA, P_out = 23 W Avg., f = 1507.5 MHz, Single - Carrier
W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
G_ps
18
19.5
21
dB
Drain Efficiency
η_D
30
32
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.2
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 38
- 35
dBc
Input Return Loss
IRL
—
- 15
-8
dB
1. Part internally matched both on input and output.
(continued)
MRF7S15100HR3 MRF7S15100HSR3
2
RF Device Data
Freescale Semiconductor