MRF6VP11KHR5 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 10 Ω
f = 130 MHz
Z_source
f = 130 MHz
Z_load
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
130
1.58 + j6.47
4.6 + j1.85
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
--
Matching
Network
--
Z _source
+
Z _load
Figure 14. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
7