MRF6VP11KHR5 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
65
T_C = --30_C
60
25_C
85_C
55
V_DD = 50 Vdc
50
I_DQ = 150 mA
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
45
20
25
30
35
40
45
P_in, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
27
80
T_C = --30_C
26
70
25_C
25
60
85_C
24
50
G_ps
23
40
22
η_D
V_DD = 50 Vdc
I_DQ = 150 mA
30
f = 130 MHz
21
Pulse Width = 100 μsec ²⁰
Duty Cycle = 20%
20
10
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency
versus Output Power
0.18
0.16
0.14
0.12
D = 0.7
0.1
D = 0.5
0.08
P_{D t1}
t₂
0.06
D = 0.3
0.04
D = 0.1
0.02
0
0.00001 0.0001
0.001
T_C = Case Temperature
Z_θJC = Thermal Impedance (from graph)
P_D = Peak Power Dissipation
t₁ = Pulse Width; t₂ = Pulse Period
D = Duty Factor = t₁/t₂
T_J (peak) = P_D * Z_θJC + T_C
0.01
0.1
1
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Transient Thermal Impedance
10⁸
V_DD = 50 Vdc
P_out = 1000 W CW
η_D = 72%
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at freescale.com/RFpower. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
For Pulse applications or CW conditions, use the MTTF calculator
referenced above.
Figure 13. MTTF versus Junction Temperature -- CW
MRF6VP11KHR6 MRF6VP11KGSR5
6
RF Device Data
Freescale Semiconductor, Inc.