MRF6VP11KHR5 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for pulse wideband applications with frequencies up to
150 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulse Performance at 130 MHz: V_DD = 50 Volts, I_DQ = 150 mA,
P_out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
Document Number: MRF6VP11KH
Rev. 8, 9/2012
MRF6VP11KHR6
MRF6VP11KGSR5
1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05
STYLE 1
NI--1230--4
MRF6VP11KHR6
CASE 2282--02
NI--1230S--4 GULL
MRF6VP11KGSR5
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
RF_inA/V_GSA 3
1 RF_outA/V_DSA
Rating
Symbol
Value
Unit
Drain--Source Voltage
V_DSS
--0.5, +110
Vdc
Gate--Source Voltage
V_GS
--6.0, +10
Vdc
Storage Temperature Range
T_stg
-- 65 to +150
°C
Case Operating Temperature
T_C
150
°C
Operating Junction Temperature ^(1,2)
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Symbol Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 67°C, 1000 W CW, 100 MHz
R_θJC
0.13
°C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle
Z_θJC
0.03
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
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