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| MRF6V4300NR1 Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Zsource
f = 450 MHz
f = 450 MHz
Zload
Zo = 10 Ω
VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW
f
MHz
Zsource
W
Zload
W
450
0.40 + j5.93
1.42 + j5.5
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 13. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
7
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