MRF6V4300NR1 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
23
22
21
20
19
50 V
40 V ^{45 V}
18
35 V
17
25 V ^{30 V}
V_DD = 20 V
16
I_DQ = 900 mA
f = 450 MHz
0 50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
60
T_C = −30_C
55
25_C
85_C
50
45
40
V_DD = 50 Vdc
I_DQ = 900 mA
f = 450 MHz
35
15
20
25
30
35
40
P_in, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
25
80
24
25_C
70
23
T_C = −30_C
60
G_ps
22
85_C
50
25_C
21
−30_C
40
85_C
20
30
19
η_D
18
10
V_DD = 50 Vdc
I_DQ = 900 mA
f = 450 MHz
100
20
10
500
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
MRF6V4300NR1 MRF6V4300NBR1
6
RF Device Data
Freescale Semiconductor