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MRF6V4300NR1 Datasheet, PDF (5/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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1000
Ciss
TYPICAL CHARACTERISTICS
100
100
Coss
Measured with ±30 mV(rms)ac @ 1 MHz
10
10
Crss
VGS = 0 Vdc
1
0
10
20
30
40
50
VDS, DRAINâSOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
10
9
VGS = 3 V
8
7
6
2.75 V
5
2.63 V
4
2.5 V
3
2
1
2.25 V
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
0
â5 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
â10 TwoâTone Measurements, 100 kHz Tone Spacing
â15
â20
â25
IDQ = 450 mA
â30
â35 650 mA
â40
900 mA
â45
â50 1350 mA
â55
â60 1125 mA
10
100
600
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
TC = 25°C
1
1
10
100
VDS, DRAINâSOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
23
22
IDQ = 1350 mA
21
900 mA 1125 mA
20
450 mA 650 mA
19
VDD = 50 Vdc
f = 450 MHz
18
10
100
600
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
60
59
P3dB = 56.06 dBm (403 W)
Ideal
58
57
P1dB = 55.15 dBm (327 W)
56
Actual
55
54
53
52
51
VDD = 50 Vdc, IDQ = 900 mA
f = 450 MHz
50
28 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
5
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