MRF6S9160HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1200 mA
−20 f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−30
−40
−50
3rd Order
−60
−70
5th Order
−80
1
7th Order
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 70 W (Avg.)
−10 ^{IDQ = 1200 mA, Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
−30 3rd Order
−40 _{5th Order}
−50
7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
61
P6dB = 54.7 dBm (294.78 W)
Ideal
59
P3dB = 53.98 dBm (249.98 W)
57
P1dB = 53.02 dBm (200.36 W)
55
53
Actual
51
V_DD = 28 Vdc, I_DQ = 1200 mA
49
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
47
26
28
30
32
34
36
38
40
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
60
V_DD = 28 Vdc, I_DQ = 1200 mA
f = 880 MHz, N−CDMA IS−95
50 _{(Pilot, Sync, Paging, Traffic Codes}
8 Through 13)
40
30
ACPR
T_C = −30_C
−20
25_C
−30
−30_C ^85_C _−40
25_C
85_C
−50
−30_C
20
G_ps
10
0
1
η_D
ALT1
10
85_C
−60
25_C ^−70
−80
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
7