MRF6S9160HR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V_DD = 28 Volts,
I_DQ = 1200 mA, P_out = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 1200 mA,
P_out = 76 Watts Avg., Full Frequency Band (865 - 895 MHz)
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 1200 mA, P_out =
160 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 58%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S9160H
Rev. 1, 5/2006
MRF6S9160HR3
MRF6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9160HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Value
- 0.5, +68
- 0.5, +12
565
3.2
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
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