|
MRF6S9160HR3 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) | |||
|
◁ |
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1200 mA,
Pout = 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
Gps
â
20
â
Drain Efficiency
ηD
â
45
â
Error Vector Magnitude
EVM
â
2
â
Spectral Regrowth at 400 kHz Offset
SR1
â
- 66
â
Spectral Regrowth at 600 kHz Offset
SR2
â
- 75
â
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 160 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps
â
20
â
Drain Efficiency
ηD
â
58
â
Input Return Loss
IRL
â
- 12
â
Pout @ 1 dB Compression Point, CW
(f = 940 MHz)
P1dB
â
160
â
Unit
dB
%
% rms
dBc
dBc
dB
%
dB
W
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
3
|
▷ |