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MRF6S9125 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
â 10
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
â20 Two âTone Measurements, Center Frequency = 880 MHz
â 30
â 40
3rd Order
â 50
5th Order
â 60
7th Order
â 70
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
â 10
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, Two âTone Measurements
â20 Center Frequency = 880 MHz
3rd Order
â 30
5th Order
â 40
â50 7th Order
â 60
0.1
1
10
100
TWO âTONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
Ideal
55
P3dB = 52.4 dBm (172.5 W)
54
P1dB = 51.5 dBm (139.3 W)
53
52
Actual
51
50
VDD = 28 Vdc, IDQ = 950 mA
49
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
48
28 29 30 31 32 33 34 35 36
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
50
VDD = 28 Vdc, IDQ = 950 mA
f = 880 MHz, NâCDMA ISâ95 (Pilot
40 Sync, Paging, Traffic Codes 8
Through 13)
30
20
10
25_C
Gps
25_C
TC = â30_C
â 30
25_C
ηD
ALT1 â40
85_C
â 30_C
â 50
25_C
85_C â60
â 30_C
ACPR
â 70
0
85_C
â 80
0.1
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
7
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