MRF6S9125 Datasheet, PDF (15/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

A
2X r1
E1
B
E2
aaa M C A B
GATE LEAD
D1
4X b1
aaa M C A
DRAIN LEAD
D D2
4X
e
3
4
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
PIN 5
NOTE 8
1
2
E
c1
H
DATUM
PLANE
F
ZONE J
A1
A2
7
E3
Y
A
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
CASE 1484 - 02
ISSUE B
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
E3
VIEW Y - Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .928 .932 23.57 23.67
D1 .810 BSC
20.57 BSC
D2 .600 − − − 15.24 − − −
E .551 .559
14 14.2
E1 .353 .357 8.97 9.07
E2 .270 − − − 6.86 − − −
E3 .346 .350 8.79 8.89
F
.025 BSC
0.64 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 .18 .28
r1 .063 .068 1.60 1.73
e
.106 BSC
2.69 BSC
aaa
.004
.10
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
15