MRF6S9125 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance: V_DD = 28 Volts, I_DQ =
950 mA, P_out = 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 700 mA,
P_out = 60 Watts Avg., Full Frequency Band (865 - 895 MHz or
921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 700 mA, P_out =
125 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S9125
Rev. 1, 7/2005
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Value
- 0.5, +68
- 0.5, +12
398
2.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
1