MRF6S27050HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
20
64
19
G_ps
18
17
16
T_C = −30_C
25_C
85_C
−30_C
25_C
56
85_C ₄₈
40
32
15
24
14
13 _ηD
12
0.1
1
V_DD = 28 Vdc
I_DQ = 500 mA
f = 2600 MHz
10
16
8
0
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
35
6
V_DD = 28 Vdc, I_DQ = 500 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
30 7 MHz Channel Bandwidth, f = 2600 MHz
5
25
4
20
3
η_D
EVM
15
2
10
1
34 35 36 37 38 39 40 41 42
P_out, OUTPUT POWER (dBm)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
17
I_DQ = 500 mA
f = 2600 MHz
16
15
14
0.3 10
V_DD = 24 V
28 V
20
30
40
50
32 V
60
70
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁹
10⁸
10⁷
10⁶
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
7