MRF6S27050HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 500 mA
f1 = 2598.75 MHz, f2 = 2601.25 MHz
−20 _{Two−Tone Measurements, 2.5 MHz Tone Spacing}
−30
−40
3rd Order
−50
−60 5th Order
7th Order
−70
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−5
−10 ^{VDD = 28 Vdc, Pout = 50 W (PEP), IDQ = 500 mA}
Two−Tone Measurements
−15 _{(f1 + f2)/2 = Center Frequency of 2600 MHz}
−20
IM3−U
−25
IM3−L
−30
−35
IM5−L
−40
IM5−U
IM7−L
−45
IM7−U
−50
−55
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
54
53
P6dB = 47.88 dBm (61.38 W) _Ideal
52
51
P3dB = 47.44 dBm (55.46 W)
50
49 P1dB = 46.91 dBm (49.06 W)
48
47
Actual
46
V_DD = 28 Vdc, I_DQ = 500 mA
45
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
44
27 28 29 30 31 32 33 34 35 36 37
P_in, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
−15
45
V_DD = 28 Vdc, I_DQ = 500 mA, f = 2600 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
−20
40 PAR = 8.5 dB @ 0.01% Probability (CCDF)
−25
35
ACPR ^−30
30
−35
25
−40
20
G_ps
−45
15
−50
10
5 η_D
0
0.2
1
ALT1
10
−55
−60
−65
40
P_out, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 10. Single - Carrier W - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
6
RF Device Data
Freescale Semiconductor