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MRF6S27050HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
â
â
10
μAdc
IDSS
â
â
1
μAdc
IGSS
â
â
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3
Vdc
VGS(Q)
2
2.8
4
Vdc
VDS(on)
â
0.21
0.3
Vdc
Crss
â
0.83
â
pF
Coss
â
232
â
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. W - CDMA,
f = 2585 MHz and 2615 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
20.5
22.5
â
%
Adjacent Channel Power Ratio
ACPR
- 40
- 42.5
â
dBc
Input Return Loss
IRL
â
- 10
â
dB
1. Part internally matched both on input and output.
MRF6S27050HR3 MRF6S27050HSR3
2
RF Device Data
Freescale Semiconductor
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