MRF6S19100HR3_08 Datasheet, PDF (7/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 22 W Avg., and η_D = 28%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
0.0001
0
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
2
4
6
8
PEAK−TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
0
1.2288 MHz
−10
Channel BW
−20
−IM3 in
−30
1.2288 MHz
Integrated BW
−40
+IM3 in
1.2288 MHz
Integrated BW
−50
−60
−70
−80
10
−90
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
−100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
7