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MRF6S19100HR3_08 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
16.6
ηD
29
16.4
27
Gps
16.2
25
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA
16 IM3 2âCarrier NâCDMA, 2.5 MHz Carrier Spacing
â35
â5
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
15.8 IRL @ 0.01% Probability (CCDF)
â41
â10
15.6
ACPR
â47
â15
15.4
â53
â20
1930 1940
1950 1960
1970 1980
1990
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
16.2
42
ηD
16
40
Gps
15.8
38
15.6 IM3
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA
2âCarrier NâCDMA, 2.5 MHz Carrier Spacing
â25
â5
15.4
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
â30
15.2 IRL
@ 0.01% Probability (CCDF)
â10
â35
15 ACPR
â40
â15
14.8
â45
â20
1930 1940 1950
1960
1970
1980
1990
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg.
18
IDQ = 1300 mA
17
1125 mA
16 900 mA
15 675 mA
450 mA
14
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoâTone Measurements, 2.5 MHz Tone Spacing
13
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â15
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
â20 TwoâTone Measurements, 2.5 MHz Tone Spacing
â25
â30
IDQ = 450 mA
â35
675 mA
â40 1300 mA
â45
â50
900 mA
1125 mA
â55
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
5
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