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MRF6S19100HR3_08 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 900 mA
TwoâTone Measurements
â10 (f1 + f2)/2 = Center Frequency of 1960 MHz
â20
â30 3rd Order
â40 5th Order
â50 7th Order
â60
0.1
1
10
100
TWOâTONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
56
55
P3dB = 51.56 dBm (143.2 W)
Ideal
54
53
52
P1dB = 50.9 dBm (124.2 W)
51
Actual
50
49
48
VDD = 28 Vdc, IDQ = 900 mA
Pulsed CW, 8 μsec(on), 1
47
msec(off)
46
f = 1960 MHz
30 31 32 33 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
60
VDD = 28 Vdc, IDQ = 900 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
50 2âCarrier NâCDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
40 Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
30
â10
ηD
IM3
â20
â30
ACPR
â40
20
â50
10
Gps
â60
0
4
10
â70
100
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
70
Gps
16
60
15
50
14
40
13
30
12
ηD
11
10
3
10
VDD = 28 Vdc
IDQ = 900 mA
f = 1960 MHz
100
20
10
0
200
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18
16.5
15
VDD = 32 V
13.5
28 V
12
24 V
10.5
9
7.5
IDQ = 900 mA
f = 1960 MHz
6
0 25 50 75 100 125 150 175 200
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S19100HR3 MRF6S19100HSR3
6
RF Device Data
Freescale Semiconductor
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