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MRF6S18060NR1 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS â 1900 MHz
17
16 TC = â30_C
25_C
15
85_C
14
13
70
â 30_C
Gps
25_C
60
50
40
85_C
ηD
30
12
20
11
VDD = 26 Vdc
IDQ = 600 mA
10
f = 1960 MHz
10
0
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
4
3.5
3 VDD = 26 Vdc
IDQ = 450 mA
2.5
2
Pout = 35 W Avg.
25 W Avg.
1.5
10 W Avg.
1
1900 1920
1940 1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 8. EVM versus Frequency
12
VDD = 26 Vdc
10 IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
8
6
4
2
TC = â30_C, 25_C
ηD
85_C
60
50
85_C
40
30
25_C
20
â 30_C
EVM
10
0
0
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. EVM and Drain Efficiency versus
Output Power
â 55
SR @ 400 kHz
â 60
Pout = 35 W Avg.
25 W Avg.
â 65
â 70
SR @ 600 kHz
â 75
â 80
1920
1940
10 W Avg.
35 W Avg.
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
25 W Avg.
10 W Avg.
1960
1980
2000
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
â 45
VDD = 26 Vdc
â 50
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
â 55
â 60
TC = â30_C
â 65
25_C
â 70
85_C
â 75
0
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
â 55
VDD = 26 Vdc
â 60
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
â 65
â 70
â 75
TC = 85_C
25_C
â 30_C
â 80
â 85
0
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
MRF6S18060NR1 MRF6S18060NBR1
7
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