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MRF6S18060NR1 Datasheet, PDF (13/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS â 1800 MHz
â 50
Pout = 35 W Avg.
â 55
â 60
25 W Avg.
SR @ 400 kHz
â 65
15 W Avg.
â 70
35 W Avg.
â 75
25 W Avg. SR @ 600 kHz
10 W Avg.
VDD = 26 Vdc
IDQ = 450 mA
EDGE Modulation
â 80
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
â 45
â 50
TC = 25_C
â 55
â 60
â 65
VDD = 26 Vdc
â 70
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
â 75
0
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 23. Spectral Regrowth at 400 kHz
versus Output Power
â 60
â 65
TC = 25_C
â 70
â 75
VDD = 26 Vdc
â 80
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
â 85
0
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 24. Spectral Regrowth at 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
13
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