MRF6S18060NR1 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 1900 MHz
18
57
0
17
η_D
55
−5
16
G_ps
15
53
− 10
51
− 15
IRL
14
49
− 20
V_DD = 26 Vdc
I_DQ = 600 mA
13
47
− 25
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 60 Watts
18
42
0
17
η_D
16
G_ps
15
40
−5
38
− 10
36
− 15
IRL
14
34
− 20
V_DD = 26 Vdc
I_DQ = 600 mA
13
32
− 25
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 30 Watts
17
I_DQ = 900 mA
16
750 mA
600 mA
15
450 mA
14
300 mA
13
V_DD = 26 Vdc
f = 1960 MHz
12
1
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
17
I_DQ = 600 mA
f = 1960 MHz
16
15
V_DD = 32 V
14
26 V
13
12 V
12
20 V
16 V
24 V
0
20
40
60
80
100
P_out, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
MRF6S18060NR1 MRF6S18060NBR1
6
RF Device Data
Freescale Semiconductor