MRF6P9220HR3_06 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
21
T_C = −30_C
20.5 _Gps
20
19.5 25_C
72
−30_C
64
25_C ₅₆
85_C
48
19
40
18.5 ^85_C
18
17.5
17
7 10
η_D
V_DD = 28 Vdc
I_DQ = 1600 mA
f = 880 MHz
100
32
24
16
8
500
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
20.5
I_DQ = 1600 mA
19.5
f = 880 MHz
18.5
17.5
16.5
24 V
32 V
16 V ^{20 V}
28 V
15.5
14.5
0
V_DD = 12 V
50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10¹⁰
10⁹
10⁸
RF Device Data
Freescale Semiconductor
10⁷
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6P9220HR3
7