MRF6P9220HR3_06 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current ⁽⁴⁾
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current ⁽⁴⁾
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 350 μAdc)
Gate Quiescent Voltage ⁽³⁾
(V_DS = 28 Vdc, I_D = 1600 mAdc, Measured in Functional Test)
Drain- Source On - Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 2.4 Adc)
Forward Transconductance ⁽¹⁾
(V_DS = 10 Vdc, I_D = 2.4 Adc)
V_GS(th)
1
2.2
3
Vdc
V_GS(Q)
2
2.8
4
Vdc
V_DS(on)
0.1
0.22
0.3
Vdc
g_fs
—
7.4
—
S
Dynamic Characteristics ^(1,2)
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.1
—
pF
Functional Tests ⁽³⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 47 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
18.5
20
23
dB
Drain Efficiency
η_D
28.5
30
—
%
Adjacent Channel Power Ratio
ACPR
—
- 47.1
- 45
dBc
Input Return Loss
IRL
—
- 14
-9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
4. Drains are tied together internally as this is a total device value.
MRF6P9220HR3
2
RF Device Data
Freescale Semiconductor