MRF6P9220HR3_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
21
31
20.7
η_D
30
20.4
29
20.1
G_ps
28
19.8
27
19.5
ACPR
19.2
18.9
IRL
18.6
V_DD = 28 Vdc, P_out = 47 W (Avg.)
I_DQ = 1600 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
−45
−7
−50
−9
−55
−11
−60
−13
18.3 ALT1
−65
−15
18
−70
−17
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P_out = 47 Watts Avg.
20
42
19.8
19.6
V_DD = 28 Vdc, P_out = 94 W (Avg.)
I_DQ = 1600 mA, N−CDMA IS−95
19.4 (Pilot, Sync, Paging, Traffic Codes
8 Through 13)
19.2
19
ACPR
18.8
η_D
G_ps
41
40
39
38
−35
−7
−40
−9
18.6
18.4
18.2 ^ALT1
−45
−11
IRL
−50
−13
−55
−15
18
−60
−17
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P_out = 94 Watts Avg.
20.5
I_DQ = 2400 mA
20
2000 mA
19.5 ^{1600 mA}
−10
V_DD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−20
19
1200 mA
18.5
800 mA
18
17.5 ^VDD ^{= 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz}
Two−Tone Measurements, 100 kHz Tone Spacing
17
3
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−30 _{IDQ = 800 mA}
−40 _{1200 mA}
2400 mA
−50
2000 mA
−60
5
1600 mA
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
5