MRF5S9070NR1 Datasheet, PDF (7/16 Pages) Motorola, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
55
Ideal
54
53
P3dB = 49.78 dBm (94.97 W)
52
51
P1dB = 49.11 dBm (81.54 W)
50
49
Actual
48
47
V_DD = 26 Vdc, I_DQ = 600 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
46
f = 880 MHz
45
27 28 29 30 31 32 33 34 35 36 37
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
20
60
G_ps
18
40
16
20
η_D
14
0
V_DD = 26 Vdc, I_DQ = 600 mA, f = 880 MHz
12
Single−Carrier N−CDMA, IS−95
−20
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
10
−40
ACPR
8
−60
ALT
6
1
−80
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. N - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
20
70
18
G_ps
60
16
50
14
40
12
30
10
η_D
8
1
V_DD = 26 Vdc
I_DQ = 600 mA
20
f = 880 MHz
10
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
10⁹
10⁸
10⁷
RF Device Data
Freescale Semiconductor
10⁶
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Junction Temperature
MRF5S9070NR1
7