MRF5S9070NR1 Datasheet, PDF (2/16 Pages) Motorola, Inc – RF Power Field Effect Transistors

Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μA)
V_GS(th)
2
2.7
4
Vdc
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 600 mAdc)
V_GS(Q)
—
3.7
—
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1.0 Adc)
V_DS(on)
—
0.18
0.22
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 4 Adc)
g_fs
—
4.7
—
S
Dynamic Characteristic
Input Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_iss
—
126
—
pF
Output Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
34
—
pF
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.37
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 26 Vdc, I_DQ = 600 mA, P_out = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
G_ps
17
17.8
—
dB
Drain Efficiency
η_D
29
30
—
%
Adjacent Channel Power Ratio
ACPR
—
- 47
- 45
dBc
Input Return Loss
IRL
—
- 19
-9
dB
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) V_DD = 26 Vdc,
I_DQ = 400 mA, P_out = 60 W, f = 921 - 960 MHz
Power Gain
G_ps
—
16.4
—
dB
Drain Efficiency
η_D
—
62
—
%
Input Return Loss
IRL
—
- 12
—
dB
P_out @ 1 dB Compression Point
(f = 940 MHz)
P1dB
—
68
—
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
V_DD = 26 Vdc, I_DQ = 400 mA, P_out = 25 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
G_ps
—
17
—
dB
Drain Efficiency
η_D
—
44
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
(continued)
MRF5S9070NR1
2
RF Device Data
Freescale Semiconductor