MRF5S9070NR1 Datasheet, PDF (3/16 Pages) Motorola, Inc – RF Power Field Effect Transistors

Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) V_DD = 26 Vdc,
I_DQ = 400 mA, P_out = 60 W, f = 865 - 895 MHz
Power Gain
G_ps
—
16.4
—
dB
Drain Efficiency
η_D
—
59
—
%
Input Return Loss
IRL
—
- 15
—
dB
P_out @ 1 dB Compression Point
(f = 880 MHz)
P1dB
—
71
—
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 οhm system)
V_DD = 26 Vdc, I_DQ = 400 mA, P_out = 25 W Avg., f = 865 - 895 MHz, GSM EDGE Signal
Power Gain
G_ps
—
17
—
dB
Drain Efficiency
η_D
—
41
—
%
Error Vector Magnitude
EVM
—
1.35
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 81
—
dBc
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
3