MRF5S4140HR3 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 460 - 470 MHz
26
V_DD = 28 Vdc
25 ^IDQ ^{= 1250 mA}
f = 465 MHz
24
23
T_C = −30_C
G_ps
22
25_C
21
80
70
−30_C
η_D
25_C ⁶⁰
85_C
50
40
30
20 _{85_C}
20
19
10
18
2
10
0
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21.5
I_DQ = 1250 mA
21
f = 465 MHz
20.5
20
19.5
19
18.5
18
17.5
0
32 V
28 V
V_DD = 12 V _{16 V}
24 V
20 V
50
100
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
7